Method of fabricating a multijunction solar cell with a bypass diode having an intrinsic layer
US7592538B2 · kind B2 · utility
5Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 2005 |
| Grant date | Sep 22, 2009 |
| Priority date | — |
| Expiry date | Sep 21, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/293
Abstract
A method of making a multijunction solar cell, including first and second solar cells on a substrate with a bypass diode having an intrinsic layer and operative for passing current when the multijunction solar cell is shaded. In one embodiment, a vertical sequence of solar cells are epitaxially grown on a first portion of the substrate, and the layers of the diode are epitaxially grown on a second portion of the substrate with the layers of the bypass diode being deposited subsequent to the layers of the top solar cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.