Display with thin film transistor devices having different electrical characteristics in pixel and driving regions
US7592628B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2006 |
| Grant date | Sep 22, 2009 |
| Priority date | — |
| Expiry date | Aug 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A system for displaying images comprises a thin film transistor (TFT) device comprising first and second active layers disposed on a substrate in the driving circuit region and in the pixel region, respectively. Each active layer comprises a channel region, a source/drain region and a lightly doped region formed therebetween. Two gate structures are disposed on the first and second active layers, respectively. Each gate structure comprises a stacked first and second gate dielectric layers and a gate layer, and the second gate dielectric layer has a length shorter than that of the first gate dielectric layer but longer than the gate length of the gate layer. The lightly doped region of the first active layer has a length different from that of the second active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.