Radiation-emitting semiconductor component and method for the production thereof

US7592636B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Johannes Baur · Regensburg, DE
• Dominik Eisert · Regensberg, DE
• Michael Fehrer · Bad Abbach, DE
• Berthold Hahn · Hemau, DE
• Volker Harle · Hemau, DE

Key dates

• Filing date: Sep 23, 2003
• Grant date: Sep 22, 2009
• Expiry date: Mar 27, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (4), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate (1) has essentially perpendicular side areas (5) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.