Light emitting diodes with reflective electrode and side electrode
US7592637B2 · kind B2 · utility
31Cited by
7References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2006 |
| Grant date | Sep 22, 2009 |
| Priority date | — |
| Expiry date | Dec 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode includes a first doped semiconductor layer, an active region and a second doped semiconductor layer. The first reflective electrode of the light emitting diode is connected to the edge surfaces of the first doped semiconductor layer. The second reflective electrode includes an optically transparent layer and is connected to the second doped semiconductor layer. The second reflective electrode may include a plurality of electrically conductive contacts extending from a reflective conductive metallic layer through a transparent layer. A method is described for fabricating the light emitting diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.