Light emitting semiconductor apparatus
US7592640B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2007 |
| Grant date | Sep 22, 2009 |
| Priority date | — |
| Expiry date | Mar 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosed subject matter relates to a light emitting semiconductor apparatus with reduced color unevenness and suppressed topical deterioration over time with regard to an amount and chromaticity of the illuminating light. The light emitting semiconductor apparatus of the disclosed subject matter can include three separate bonding pads. Among those, the centrally located bonding pad is die bonded to two types of light emitting devices which have an identical material and structure and almost equal sizes, but are different in orientation and direction characteristic of PN-electrodes. The bonding pad located in an outermost location is die-bonded to the light emitting device. In this case, the direction characteristic of a central light emitting device exhibits a substantial reverse conical form while the direction characteristic of the light emitting device exhibits a substantial conical form. The light emitting device mounted on the central bonding pad and the light emitting device mounted on the outermost bonding pad can have respective electrodes on the wire bonding side which are stitch-bonded to bonding wires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.