Thyristor-based semiconductor device with indium-carbon implant and method of fabrication
US7592642B1 · kind B1 · utility
1Cited by
26References
17Claims
0Family size
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Key dates
| Filing date | Apr 4, 2006 |
| Grant date | Sep 22, 2009 |
| Priority date | — |
| Expiry date | Jul 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
Abstract
A thyristor-based memory device may comprise two base regions of opposite type conductivity formed between a cathode-emitter region and an anode-emitter region. A junction defined between the p-base region and the cathode-emitter region of the thyristor may be “treated” with a high ionization energy acceptor such as indium in combination with carbon as an activation assist species. These two implants may form complexes that may extend across the junction region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.