Semiconductor device and manufacturing method thereof
US7592647B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2006 |
| Grant date | Sep 22, 2009 |
| Priority date | — |
| Expiry date | Dec 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device includes a GaN-based semiconductor layer that is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region, an electron supply layer that has a larger band gap than the electron conduction layer and is formed on the electron conduction layer disposed on the inner surface of the opening region, and a gate electrode formed on a side surface of the electron supply layer in the opening region. A source electrode is formed on the GaN-based semiconductor layer. A drain electrode is connected to a surface of the GaN-based semiconductor layer opposite to the source electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.