Reduced crosstalk CMOS image sensors

US7592654B2 · kind B2 · utility

Assignee

• Aptina Imaging Corporation · KY

Inventors

• Sandeep R. Bahl · Palo Alto, US
• Fredrick P. LaMaster · Fort Collins, US
• David W. Bigelow · Loveland, US

Key dates

• Filing date: Nov 15, 2007
• Grant date: Sep 22, 2009
• Expiry date: Nov 18, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/184

Abstract

CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate, an epitaxial layer above the substrate, and a plurality of pixels extending into the epitaxial layer for receiving light. The image sensor also includes at least one of a horizontal barrier layer between the substrate and the epitaxial layer for preventing carriers generated in the substrate from moving to the epitaxial layer, and a plurality of lateral barrier layers between adjacent ones of the plurality of pixels for preventing lateral diffusion of electrons in the epitaxial layer.