Semiconductor device with silicide-containing gate electrode and method of fabricating the same
US7592674B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2005 |
| Grant date | Sep 22, 2009 |
| Priority date | — |
| Expiry date | Aug 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
Abstract
There is provided a semiconductor device which is capable of solving a problem of threshold control in CMOS transistor, accompanied with combination of a gate insulating film having a high dielectric constant and a metal gate electrode, and significantly enhancing performances without deterioration in reliability of a device. The semiconductor device includes a gate insulating film composed of a material having a high dielectric constant, and a gate electrode. A portion of the gate electrode making contact with the gate insulating film has a composition including silicide of metal M expressed with MxSi1-X (0<X<1), as a primary constituent. X is greater than 0.5 (X>0.5) in a p-type MOSFET, and is equal to or smaller than 0.5 (X≦0.5) in a n-type MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.