Reference voltage generation circuit, and constant voltage circuit using the reference voltage generation circuit
US7592861B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 28, 2006 |
| Grant date | Sep 22, 2009 |
| Priority date | — |
| Expiry date | May 4, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/147
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A reference voltage generation circuit includes: a first field-effect transistor that is an n channel-type field-effect transistor of a depletion-type, wherein one terminal of the first field-effect transistor is connected to a predetermined power source voltage; a second field-effect transistor including a concentrated n-type gate, wherein one terminal of the second field-effect transistor is connected to another terminal of the first field-effect transistor; and a third field-effect transistor including a concentrated p-type gate, wherein one terminal of the third field-effect transistor is connected to another terminal of the second field-effect transistor; wherein a gate of the first field-effect transistor is connected to a part where the first and the second field-effect transistors are connected, each substrate gate of the first and the third field-effect transistors is connected to a ground voltage, a gate and a substrate gate of the second field-effect transistor and a gate of the third field-effect transistor are connected to a connecting part where the second and the third field-effect transistors are connected, and a reference voltage is output from the connecting part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.