Semiconductor device
US7592980B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2003 |
| Grant date | Sep 22, 2009 |
| Priority date | — |
| Expiry date | Jul 27, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/40
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.