Semiconductor devices, CMOS image sensors, and methods of manufacturing same
US7595213B2 · kind B2 · utility
31Cited by
1References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 7, 2006 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Aug 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A semiconductor device includes: a trench device isolating region formed in a substrate to define a photodiode active region; a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the device isolating region; and a photodiode formed within the photodiode active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.