Plasma processing method and plasma processing apparatus
US7595462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2007 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Mar 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/2418
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A plasma processing is performed by using a plasma processing apparatus which includes a first electrode and a second electrode disposed relatively movable to the first electrode between which an object to be processed is disposed, and a solid dielectric material disposed to be continuously connected to at least processing starting and final end sides of the object. A process gas is introduced between the first and second electrodes under a state in which the first electrode abuts on entire surfaces of the object and the solid dielectric material, and a voltage is applied between the first and second electrodes to thereby process the object by plasma discharge generated between the first and second electrodes while moving the second electrode relatively to the first electrode and the object.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.