Semiconductor devices having gallium nitride epilayers on diamond substrates
US7595507B2 · kind B2 · utility
30Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2006 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Feb 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.