Single crystal wafer for semiconductor laser
US7595509B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 27, 2005 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Mar 2, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A surface of the single crystal wafer 5 for semiconductor laser having an orientation flat formed by cleaving is polished by using the abrasive cloth 8 with high hardness under the optimized pressure for pushing the wafer and polishing rate, such that the polishing rate on the whole surface of the respective wafer 5 becomes uniform. The facet roll-off D occurred at a ridge of a cleavage surface 4 of the single crystal wafer 5 for semiconductor laser to be equal to or less than 40 μm. The single crystal wafer for a semiconductor laser of the present invention can provide an improvement in a precision of an optical alignment of mask pattern using the cleavage surface as a reference, and an improvement in process yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.