Semiconductor laser module improved in high frequency response
US7595510B2 · kind B2 · utility
0Cited by
3References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 27, 2005 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | May 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0683
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention reduces the radiation noise and the degradation of the optical waveform appeared in the output of the laser module. The laser module of the present invention comprises the laser diode, the photodiode, and the resistor, which are mounted on the stem of the laser module. The stem includes four lead terminals, one of which is commonly connected to the laser diode ad the photodiode via the resistor. Therefore, the leak of the modulation current applied to the lead terminal, to which the laser diode and the photodiode are commonly connected, may be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.