Thin film semiconductor device and manufacturing method
US7595533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2007 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Apr 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
When n-channel thin film transistors(TFTs) and p-channel TFTs are formed on a polycrystalline silicon film formed on a glass substrate, a process is included in which P-dopant or N-dopant is introduced at the same time to the channel region of a part of the n-channel TFTs and a part of the p-channel TFTs. In one channel doping operation, a set of low-VT and high-VT p-channel TFTs and a set of low-VT and high-VT n-channel TFTs can be formed. This method is used for forming high-VT TFTs, which can reduce the off-current, in logics and switch circuits and for forming low-VT TFTs, which can enlarge the dynamic range, in analog circuits to improve the performance of a thin film semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.