Semiconductor device and method for manufacturing the same
US7595556B2 · kind B2 · utility
0Cited by
2References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 6, 2006 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Jul 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments relate to a semiconductor device and a method for manufacturing the same. According to embodiments, the semiconductor device may include a semiconductor substrate formed with a metal interconnection, a first interlayer dielectric layer formed on the metal interconnection and having a first contact plug, a second interlayer dielectric layer formed on the first interlayer dielectric layer and having a second contact plug, and a third interlayer dielectric layer formed on the second interlayer dielectric layer and having a third contact plug, wherein the first to third contact plugs are connected to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.