Magnetic random access memory and method of reducing critical current of the same
US7596017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2007 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Nov 9, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory includes a substrate, a free layer and a spacer layer. The substrate and the free layer are made of a vertical anisotropy ferrimagentic thin film. The spacer layer is sandwiched between the substrate and the free layer and is made of an insulating layer. The method uses a modified Landau-Lifshitz-Gilbert equation to obtain a critical current value as a function of exchange coupling constant. The critical current value is predictable under several external magnetic fields being applied. When the exchange coupling constant is proportionally varied, the critical current value is reduced to a third of its original value under an optimum state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.