Method for forming a coating film on a facet of a semiconductor laser diode
US7596162B2 · kind B2 · utility
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10Claims
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Assignee
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Key dates
| Filing date | Aug 31, 2007 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Oct 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention is to provide a method for producing a semiconductor laser diode (LD) with an enhanced ESD resistance. The method includes a step for forming an aluminum film on a facet of the LD and a step for forming an aluminum oxide film on the aluminum film. The underlying aluminum film is oxidized during the formation of the aluminum oxide film to form a double aluminum oxide layer. The ratio of the oxide composition of the underlying aluminum oxide film is smaller than that of the upper aluminum oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.