Oxygen-chemical agent sensor
US7597788B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2005 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Sep 20, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/957
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A gas sensing mechanism and a gas sensor based on a semiconducting carbon nanotube diode structure are disclosed. The gas sensor operates by detecting the change in conductivity characteristic of the current vs. voltage behavior of an I—N, or I—P junction, in the carbon nanotube. In the presence of electrophilic gas species at the I—N junction, or nucleophilic gas species at the I—P junction, a P—N, or N—P, junction is created by doping of the carbon nanotube by the respective gas species. The resulting change from the undoped, instrinsic i-type to p-type, or n-type, creates a diode structure whose conductivity characteristics can be measured with high accuracy and selectivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.