Positive and negative dual function magnetic resist lithography
US7598022B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2006 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Jun 16, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0042
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention discloses a positive and negative dual function magnetic resist lithography method. At first, a substrate coated with a positive and negative dual function magnetic resist layer is provided. The positive and negative dual function magnetic resist layer comprises a manganese(Mn)-containing precursor and at least one hydrophilic polymer. Next, at least one exposure procedure for the positive and negative dual function magnetic resist layer is performed to form either a positive resist or a negative resist. In addition, after the at least one exposure procedure, a developing procedure using water-soluble developer is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.