Method for fabricating pixel structure
US7598102B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2008 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Jul 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6729
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A fabricating method for a pixel structure including following procedures is provided. First, a gate and a gate insulator layer are formed sequentially on a substrate. Next, a semiconductor layer, a conductive layer and a photosensitive black matrix having a color filter containing opening are sequentially formed on the gate insulator layer. The photosensitive black matrix includes a first portion and a second portion. A thickness of the first portion is smaller than that of the second portion. A channel, a source and a drain are formed simultaneously using the photosensitive black matrix as a mask. A passivation is formed on the substrate, and a color filer layer is formed within the color filter containing opening via an inkjet printing process and a dielectric layer is formed thereon. Next, a patterning process is applied to expose the drain. Ultimately, a pixel electrode connected to the drain is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.