Method of forming a metal contact and passivation of a semiconductor feature
US7598104B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2007 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Nov 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8314
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a metal contact and passivation of a semiconductor feature, and devices made using the method. The method comprises the steps of forming a dielectric mask on a semiconductor substrate utilising photolithography processes; etching the semiconductor substrate such that one or more features are formed underneath respective portions of the dielectric mask; depositing a passivation layer on the substrate with the dielectric mask in place above the features; subjecting the substrate to an etchant such that the dielectric mask is etched at a higher rate than the passivation layer, whereby portions of the passivation layer deposited on the dielectric mask are lifted off from the substrate; and depositing a metal layer on the substrate including over the remaining passivation layer and exposed portions of the features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.