Method and device for growing pseudomorphic AlInAsSb on InAs
US7598158B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2006 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Mar 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.