Method for manufacturing thin film semiconductor
US7598160B2 · kind B2 · utility
3Cited by
1References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 6, 2008 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Jun 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
Abstract
A method for manufacturing thin film semiconductor device is provided. The semiconductor thin film includes a semiconductor thin film and a gate electrode and has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.