Semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing and manufacturing method thereof
US7598520B2 · kind B2 · utility
232Cited by
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19Claims
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Key dates
| Filing date | Jun 1, 2007 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Feb 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
Abstract
A semiconductor device includes an oxide semiconductor thin film layer of zinc oxide. The (002) lattice planes of at least a part of the oxide semiconductor thin film layer have a preferred orientation along a direction perpendicular to a substrate of the semiconductor device and a lattice spacing d002 of at least 2.619 Å.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.