Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
US7598544B2 · kind B2 · utility
21Cited by
67References
6Claims
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Key dates
| Filing date | Jan 13, 2006 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Mar 11, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.