Semiconductor device and method for fabricating a semicondutor device including first and second hydrogen diffusion preventing films
US7598557B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2005 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Nov 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device comprises a first insulation film 26 formed over a semiconductor substrate 10, first conductor plug 32 buried in a first contact hole 28a formed down to a source/drain diffused layer 22, a capacitor 44 formed over the first insulation film 26, a first hydrogen diffusion preventing film 48 formed over the first insulation film 26, covering the capacitor 44, a second insulation film 50 formed over the first hydrogen diffusion preventing film and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the first hydrogen diffusion preventing film 26 and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the second insulation film 50, second conductor plug 62 buried in a second contact hole 56 formed down to the lower electrode 38 or the upper electrode 42 of the capacitor 44, a third conductor plug 62 buried in a third contact hole 58 formed down to the first conductor plug 32, and an interconnection 64 connected to the second conductor plug 62 or the third conductor plug 62.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.