Image sensor with decreased optical interference between adjacent pixels
US7598581B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2006 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Jan 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a photodiode formed in a substrate in the pixel region, first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1, first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M, at least one layer of dummy metal lines formed over the Mth metal lines but formed not to overlap with the photodiode, and a microlens formed over the one layer of the dummy metal lines to overlap with the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.