Memory device and method for precharging a memory device
US7599237B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2007 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Nov 26, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/005
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device having a short precharge time is included. The memory device selects at least two pairs of bit lines and connects the selected two pairs of bit lines to the sense amplifier within a preparatory period during which the two pairs of bit lines and an input to the sense amplifier are precharged. In the preparatory period an input unit of the sense amplifier is precharged through by a plurality of precharge units through more than two bit lines, and thus the precharge time may be decreased. The memory device selects one pair of bit lines and connects the selected pair of bit lines to a sense amplifier within a read/write (data transmission) period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.