Saturated transistor based temperature sensor
US7600913B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2003 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Apr 15, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system for measuring a temperature of an electrical device is provided. The system comprises a transistor and a microprocessor. The transistor is part of an electrical device and is operable to perform a first function for the electrical device. For example, the transistor is operable in a saturated state to control activation of a pre-charge circuit in an electronic power assisted steering system. The microprocessor is responsive to a voltage at the transistor. The voltage of the transistor varies as a function of temperature (i.e., heat emitted from the electrical device). The microprocessor is operative to determine a temperature of the electrical device as a function of the voltage, where the sensing of temperature of the electrical device is different than the first function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.