Precursor solution, method of preparation thereof and use thereof

US7601278B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Joerg Meyer · Wagenfeld, DE
• Mareike Klee · Straelen, DE
• Rainer Kiewitt · Roetgen, DE

Key dates

• Filing date: Jul 1, 2004
• Grant date: Oct 13, 2009
• Expiry date: Feb 27, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02282
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Crystalline, single-phased layers of PbMg0.33 Nb0.6703 with relative dielectric constants of 1500 and more are prepared through the use of a precursor solution that comprises a macrocyclic complexing agent. This agent is added to the lead component in an organic solution. The resulting layer is part of a device which may further include semiconductor elements and resistors.