Method for fabricating semiconductor device
US7601576B2 · kind B2 · utility
26Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2005 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Nov 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method for fabricating a semiconductor device comprises the steps of: forming on a silicon substrate 10 a hard mask 20 of a silicon oxide film 12, and a silicon nitride film 14 having a width smaller than a width of the silicon oxide film 12; etching the silicon substrate 10 with the hard mask 20 as the mask to form a trench 26 for defining an active region 24 in the silicon substrate 10; and forming a silicon oxide film 28 on the silicon substrate 10 with the trench 26 formed in.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.