Semiconductor array and method for manufacturing a semiconductor array

US7601584B2 · kind B2 · utility

Assignee

• ATMEL Germany GmbH · DE

Inventor

• Christoph Bromberger · Heilbronn, DE

Key dates

• Filing date: Nov 4, 2005
• Grant date: Oct 13, 2009
• Expiry date: Nov 4, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/177

Abstract

A method for manufacturing a semiconductor array, particularly a high-frequency bipolar transistor, is provided, the method includes process steps, so that a dielectric is produced on a mono-crystalline, first semiconductor region of a first conductivity type, a silicide layer is deposited and patterned in such a way that the silicide layer is insulated from the first semiconductor region by the dielectric, and, to form a base region, a second semiconductor region of a second conductivity type is applied to the first semiconductor region and to the silicide layer in such a way that the second semiconductor region lies with a first interface on the first semiconductor region and with a second interface on the silicide layer.