Patent · US Active

Method for producing semi-conditioning material wafers by moulding and directional crystallization

US7601618B2 · kind B2 · utility

2Cited by

2References

13Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Béatrice Drevet · Grenoble, FR
Dominique Sarti · Chambéry, FR
Denis Camel · Chambéry, FR
Jean-Paul Garandet · Aix-les-Bains, FR

Key dates

Filing date	Jun 24, 2008
Grant date	Oct 13, 2009
Priority date	—
Expiry date	Jun 24, 2028

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/60
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Wafers of semi-conducting material are formed by moulding and directional crystallization from a liquid mass of this material. A seed, situated at the bottom of the crucible, presents an orientation along non-dense crystallographic planes. The mould is filled with the molten semi-conducting material by means of a piston or by creation of a pressure difference in the device. The mould is preferably coated with a non-wettable anti-adhesive deposit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.