Method and apparatus for plasma processing
US7601619B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2006 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Apr 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32412
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a turbo-molecular pump while introducing the gas within the vacuum chamber from a gas supply device, and the pressure within the vacuum chamber is kept at a predetermined value by a pressure regulating valve. A high-frequency power supply for a plasma source supplies a high-frequency power to a coil provided near a dielectric window to generate inductively coupled plasma within the vacuum chamber. A high-frequency power supply for the sample electrode for supplying the high-frequency power to the sample electrode is provided. A matching circuit for the sample electrode and a high-frequency sensor are provided between the sample electrode high-frequency power supply and the sample electrode. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor and an arithmetic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.