Methods for fabricating nanocoils
US7601620B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2006 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Jan 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Improved nanocoils, systems and methods for fabricating nanocoils. Embodiments enable wet etching techniques for releasing coiling arm structures and forming nanocoils. A method for fabricating nanocoils includes providing a silicon-on-insulator (SOI) wafer in which SOI wafer includes a buried oxide layer, patterning one or more devices onto a silicon device layer on top of the buried oxide layer, depositing a tensile stressed layer on the silicon device layer so that stressed layer and silicon device layer form a stressed coiling bi-layer, patterning a coiling arm structure on the stressed coiling bi-layer, depositing a metal encapsulation layer on the stressed coiling bi-layer, and releasing the coiling arm structure so that coiling arm coils to form nanocoil. A system for fabricating nanocoils includes a substrate, a coiling arm structure including, a buried oxide layer deposited on the substrate, a stressed coiling bi-layer attached to the buried oxide layer including a silicon device layer that includes one or more devices defined thereon and a stressed nitride layer that provides a tensile coiling stress, and a metal encapsulation layer that protects stressed nitride layer fr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.