Method of forming surface irregularities and method of manufacturing gallium nitride-based light emitting diode
US7601621B2 · kind B2 · utility
8Cited by
1References
3Claims
0Family size
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Key dates
| Filing date | May 10, 2007 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | May 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A method of forming surface irregularities comprises preparing a GaN substrate; forming a mask on a surface of the GaN substrate, the mask defining a surface-irregularity formation region; and wet-etching portions of the surface of the GaN substrate by using the mask as an etching mask. The wet-etching of the GaN substrate is performed until the end of one surface of the GaN substrate to be formed by the wet-etching using the mask meets the end of another surface of the GaN substrate to be formed by the wet-etching using the mask, the another surface being adjacent to the one surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.