Gallium nitride-based compound semiconductor multilayer structure and production method thereof
US7601979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2005 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Jan 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
Abstract
An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining a satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, an active layer, and a p-type layer formed on the substrate, the active layer being sandwiched by the n-type layer and the p-type layer, and the active layer comprising a thick portion and a thin portion, wherein the active layer has a flat lower surface (on the substrate side) and an uneven upper surface so as to form the thick portion and the thin portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.