Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator
US7601984B2 · kind B2 · utility
1,023Cited by
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6Claims
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Key dates
| Filing date | Nov 9, 2005 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Jan 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.