Semiconductor light-emitting device
US7601985B2 · kind B2 · utility
3Cited by
6References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 15, 2006 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Feb 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1−x−yInyN (wherein 0.001≦x<0.1, 0<y<1 and x+y<1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.