Semiconductor light emitting device
US7601987B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2008 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Mar 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a semiconductor light emitting device realizing a lower detection level of spontaneous emission light by a semiconductor photodetector and an improvement in light detection precision by selectively reflecting spontaneous emission light. The semiconductor light emitting device includes a semiconductor light emitting element for generating light including stimulated emission light having a wavelength λo and spontaneous emission light having a wavelength band including the wavelength λo, a multilayer filter having a stack structure in which a low-refractive-index layer having a thickness of λ1/(4×na) (λ1<λo and na denote refractive index) and a high-refractive-index layer having a thickness of λ1/(4×nb) (nb>na and nb denote refractive index) are alternately stacked, and a semiconductor photodetector having a light absorption layer that absorbs part of the light passed through the multilayer filter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.