High voltage semiconductor devices and methods for fabricating the same
US7602037B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2007 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Jun 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/159
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An exemplary embodiment of a semiconductor device capable of high-voltage operation includes a substrate with a well region therein. A gate stack with a first side and a second side opposite thereto, overlies the well region. Within the well region, a doped body region includes a channel region extending under a portion of the gate stack and a drift region is adjacent to the channel region. A drain region is within the drift region and spaced apart by a distance from the first side thereof and a source region is within the doped body region near the second side thereof. There is no P-N junction between the doped body region and the well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.