Semiconductor device and method for manufacturing semiconductor device
US7602061B2 · kind B2 · utility
3Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2007 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Oct 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a semiconductor device including: an insulating film configured to be provided on a substrate and be porosified through decomposition and removal of a pore-forming material; a covering insulating film configured to be provided on the insulating film; and conductive layer patterns configured to be provided in the covering insulating film and the insulating film and reach the substrate, wherein the insulating film includes a non-porous region in which the pore-forming material remains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.