Semiconductor laser diode with narrow lateral beam divergence
US7602828B2 · kind B2 · utility
6Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2007 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Nov 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to high power broad-area semiconductor lasers incorporating a structure that provides both gain guiding and index guiding. The lateral width of the index guiding region is greater than the lateral width of the gain guiding region by at least 20 micron. This results in a high power broad-area semiconductor laser which has reduced lateral divergence of the output beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.