Monolithic semiconductor laser and method of manufacturing the same
US7602830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2007 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Jul 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers disposed above and below a first active layer; and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers disposed above and below a second active layer. The first and second active layers are made of different semiconductor materials from each other. The first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.