Semiconductor laser device having an insulation region
US7602831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2006 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Jun 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1039
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes a substrate having a first surface and a second surface opposite to the first surface, an active region formed on the second surface of the substrate, a cladding layer formed on the active region, and an insulation region formed in the cladding layer to form on the second surface of the substrate a first laser region having a first size and a second laser region having a second size different from the first size. The first laser region is used for generating a first optical spectrum having a first laser mode channel space. The second laser region is used for generating a second optical spectrum having a second laser mode channel space. A combination of the first optical spectrum and the second optical spectrum forms a single mode laser. Without any gratings, the semiconductor laser device is easy to be fabricated and has a low fabrication cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.