Mask design using library of corrections
US7603648B2 · kind B2 · utility
9Cited by
1References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 29, 2005 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Jun 18, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems, techniques, and approaches to quickly generate mask patterns, synthesize near-fields, and design masks. In one aspect, a mask may be designed by modeling the transmitted field using a library of corrections and a fast field model.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.