Heteroepitaxial growth method for gallium nitride
US7604697B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Mar 11, 2005 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | May 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate, and a step B of depositing or vapor depositing at least one atom layer of gallium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.